July 23, 2015, anysilicon
Berkeley University of California researchers created the FinFET term to describe a special type of transistor built on an SOI substrate. FinFET transistors were developed in 1999 and Intel was the first company to produce this technology already in 2011.
These transistors are nonplanar and double deeded based of a single gate transistor design. The difference between the FinFET and any other type of transistor is its specialty conducting channel that is wrapped and encased in a silicon fin. It’s this family forms the main body of the device.
FinFET technology can vary in its thickness and generally the thickness of each man is measured from the source of the conductor to the drain. It’s the length of determines the conductor channel length of the device and the types of electrical controls and leakage that might occur. The technology comes completely customizable and this can be extremely beneficial when overcoming short channel effects.
FinFET is currently used around the world in a massive number of applications. A popular use for this type of technology is amongst microprocessor manufacturers. Manufacturing companies like AMD and IBM are utilizing double gate development with FinFET. Intel is working to develop tri-gate architecture utilizing a finFET system currently as well. GLOBALFOUNDRIES announced in 2014 that they would be including a 14nm process technology in the production of their FinFET. TSMC also produces 16nm FinFET which further drives competition in the marketplace.