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Leakage Power

December 01, 2018, anysilicon

Leakage power is dissipated in circuits when none of the transistors within the standard cell are switching and the inputs are in a steady state. This component of power has become significant in the sub-micron technology processes. It is dependent on the ambient temperature, the threshold voltage of standard cells and the input combination of the standard cell during steady state. Leakage power increases exponentially with an increase in ambient temperature.

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