SmartDV™ Technologies will exhibit at SemIsrael Expo 2019 in Airport City, Israel, November 19 and ICCAD China 2019 November 21-22 in Nanjing, China.
At both events, SmartDV will showcase why it is the Proven and Trusted choice for Verification and Design Intellectual Property (IP), including new additions to its
Belgium, October 28, 2019 – Sofics bvba (www.sofics.com), a leading semiconductor integrated circuit IP provider announced that its TakeCharge® Electrostatic Discharge (ESD) portfolio is silicon proven on TSMC’s advanced 16nm, 12nm and 7nm FinFET processes. More than 80 fabless companies use Sofics solutions to enable higher performance, higher robustness and
Read MoreOctober 22, 2019 — OPENEDGES Technology, Inc. the leading IP provider of Memory subsystem IP today announced a partnership with INNOSILICON to promote OPENEDGES DDR memory controller and INNOSILICON DDR PHY. The Companies have validated the interoperability between OPENEDGES DDR3/4/LPDDR3/4 memory controller and INNOSILICON DDR3/4/LPDDR3/4 PHY.
INNOSILICON is a world-class,
Belgium, September 26, 2019 – Sofics bvba (www.sofics.com), a leading semiconductor integrated circuit IP provider announced that it has expanded its TakeCharge® Electrostatic Discharge (ESD) and Analog I/O portfolio with solutions for TSMC’s N5 process technology. The cells enable high speed and high frequency interfaces.
Today many communication channels,
Plymouth, UK, 23rd September 2019 — Moortec, a leading provider of in-chip monitoring and optimisation IP, today announced the availability of its latest In-Chip Monitoring IP Subsystem on TSMC’s N5 and N5P process technologies.
A global acceleration in cutting-edge technologies including 5G, Artificial Intelligence (AI), Machine Learning and Data Centre
Moortec, specialists in Embedded In-Chip Monitoring Subsystem IP are pleased to announce that they have appointed Lee Vick as their new Vice President of North America Sales.
Lee will be promoting Moortec’s innovative embedded subsystem PVT IP on 40nm, 28nm, 16nm, 12nm, 7nm and below across the territory, building