Magnetoresistive random-access memory (MRAM) IP Core
MRAM IP stands for Magnetoresistive Random Access Memory IP. It is a kind of non volatile memory which, instead of using dielectric layers or ferroelectric substances like DRAM and FRAM, stores the data in magnetic domains or storage elements. This is done with the help of a setup also called the magnetic tunnel junction, each constituting a cell and multiple cells making up a grid for a memory storage device.
It works because of two ferromagnetic plates that are separated by a thin layer of insulation. One of the plates is a permanent magnet- meaning it has been pre set to a fixed polarity. Whereas the other plate is versatile and its magnetization can be changed in order to create a memory storage domain when it matches the external field.
Data reading from these cells is performed when the electrical resistance across the cell is measured as it changes when the magnetization polarity is changed. Data writing is performed through multiple manners, one of them being a classic design where write lines are arranged at right angles with an induced magnetic field generated at the junction of the two lines when current passes through them, a force that is picked up by the writable plate. These lines are organized around each cell.
When it comes to the characteristics of the MRAM IP Core memory, it is similar to DRAM in several ways. Just like the latter, the MRAM is a high density RAM and its structure comprises of a capacitor- which is the memory element, wires, and a transistor for control. This kind of a cell is also known as the 1T1C cell. This structure and high density also means that MRAMs are a relatively cheaper option compared to some other RAMs in the market.
MRAM IP Core also consumes less amount of power and operates much faster in comparison to its competitors. This is because unlike DRAM, MRAM does need to be refreshed as they lose charge and instead, retain the memory even when the power source is turned off or removed, similar to how flash RAM operates. But unlike the latter, MRAM does not need a large, energy consuming pulse to rewrite the chip and does not need the help of a charge pump, consuming only slightly more power to write than it does to read. As such, MRAM is a much better option for those wanting a longer life time as well as reduced costs for their operations.
Partner with us