TSMC

TSMC’s 16/12nm provides the best performance among the industry’s 16/14nm offerings. Compared to TSMC’s 20nm SoC process, 16/12nm is 50 % faster and consumes 60% less power at the same speed. It provides superior performance and power consumption advantage for next generation high-end mobile computing, network communication, consumer and automotive electronic applications.

TSMC’s 10nm Fin Field-Effect Transistor (FinFET) process provides the most competitive combination of performance, power, area, and delivery parameters. The Company began accepting customer tape-outs for its 10nm FinFET process in the first quarter of 2016, and started high-volume shipments in early 2017, successfully supported major customers’ new mobile product launches.

TSMC’s 7nm Fin Field-Effect Transistor (FinFET) process technology provides the industry’s most competitive logic density and sets the industry pace for 7nm process technology development by delivering 256Mb SRAM with double-digit yields in June 2016. Risk production started in April 2017, and we received more than ten customer product tape-outs in 2017.

TSMC’s 5nm Fin Field-Effect Transistor (FinFET) process technology is optimized for both mobile and high performance computing applications. It is scheduled to start risk production in the second half of 2019.

TSMC is dedicated to developing leading edge technology that provides the foundation for semiconductor innovation. TSMC’s leading edge processes combine advanced 193nm immersion photolithography, performance-enhancing silicon strain technology, and extreme low-k (ELK) inter-metal dielectric materials to support both the performance and reliability required by today’s advanced technology designs.

TSMC provides the foundry segment’s leading advanced process technologies and design collaterals. These include 55nm, 65nm, 90nm and 0.13-micron processes. TSMC’s advanced 12-inch process technology provides the optimal combination of gate density, speed, and power, making it ideal for a broad range of applications such as computing, communications, and consumer electronics. Each node supports logic, and mixed-signal/RF options with an embedded DRAM option available for 65nm and 90nm. Design collaterals include TSMC internal macros and foundry’s largest third-party IP library portfolios.

Much of TSMC’s Open Innovation Platform® targets advanced technology deployment. It is collaborative model brings together the best technical thinking of partners and customers alike and has driven TSMC’s reputation for ramping advanced technology processes at the leading edge of the adoption curve.

TSMC advanced technology is significantly ahead of the ITRS roadmap. The company delivers a new advanced technology generation every two years. Each node surpasses the previous one by close to half the area and usually features 30 to 50 percent more performance, while supporting similar leakage levels. TSMC provides substantial advanced technology capacity by ramping the same node at multiple 300mm GIGAFAB™ facilities each of which will produce over 100,000 12-inch wafers per month.

Application specific solutions for cellular base band, PC graphic, Power IC, WLAN and Cellular RF, provide process technologies, design kits and tools, and test and assembly services that optimize costs and device performance. We welcome technology phase-ins and support process customization to meet very specific design requirements.

In addition to wafer manufacturing services, TSMC provides a wide range of backend services. Take advantage of TSMC’s diversified and streamlined one-stop services that include:

Wafer Bumping Services

Chip on Wafer on Substrate

WLCSP

TSMC began providing testing services in the late 1980’s and, over time, has expanded its services to cover not only memory, logic and mixed-mode, but also today’s RF and direct docking technologies. TSMC continues to invest in advanced ATE development and is continuously installing an advanced yield analysis infrastructure.