Woodcliff Lake, New Jersey — March 3, 2023 — Semiconductor intellectual property provider CAST today announced the immediate availability of a new deeply embedded, low-power RISC-V processor IP core and enhancements to its functional safety RISC-V processor IP core.
New Low-Power Embedded RISC-V Processor
The BA5x™ RISC-V Deeply Embedded
SAN JOSE, California – Mar 01, 2023 – Omni Design Technologies, a leading provider of high-performance, low-power mixed-signal Intellectual Property (IP) solutions today announced that it has received ISO 9001 certification for the design and development of high performance, ultra-low power IP cores.
Omni Design’s objective is to provide customers
Cesson-Sévigné (France) / Cork (Ireland), February 23, 2023 – Secure-IC, the rising leader and unique global provider of end-to-end cybersecurity solutions for embedded systems and connected objects, and Trasna, an IoT secure hardware and software specialist, announce today they have succeeded to offer a groundbreaking Physically Unclonable Function (PUF) solution.
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–January 4, 2023–
Advanced Semiconductor Technology Ltd. (AST) is pleased to announce that a new representative agreement has been signed with eMemory. eMemory Technology Inc. is the world’s largest pure-play developer and provider of logic-based non-volatile memory (Logic NVM) technology. The company has licensed its intellectual property to semiconductor
Security IP cores are blocks that provide security features for integrated circuits (ICs) and systems-on-chips (SoCs). It includes encryption, decryption, authentication, and key management functions that protect against unauthorized access or hacking. The IP core can be integrated into a larger IC design to provide enhanced security for applications such
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January 13, 2023 — Certus is pleased to announce the release of our ESD library in GlobalFoundries 12nm Finfet process. It offers a wide range of generic voltage solutions: 0.8V, 1.2V, 1.5V, 1.8V, 2.5V, and 3.3V for power domains and I/Os. The library provides ESD solutions from 500V to >8kV HBM; 3A
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