Seoul, South Korea – 3rd November 2025 – Samsung Electronics today announced that it has officially begun mass production of its next-generation 2-nanometer (nm) process technology, marking a significant milestone in the company’s advanced semiconductor roadmap. The 2nm process, featuring Gate-All-Around (GAA) transistor technology, positions Samsung at the forefront of nanosheet transistor development, ahead of global competitors Intel and TSMC in initiating volume manufacturing.
Samsung’s 2nm process utilizes a nanosheet field-effect transistor (FET) design, enabling enhanced power efficiency and performance for next-generation AI, HPC, and mobile applications. This milestone follows Samsung’s early leadership in 2022 when it became the first company to ship 3nm chips based on GAA nanosheet technology.
“Our 2nm technology is progressing as planned,” said Sukchae Kang, Executive Vice President of Samsung Foundry. “This advancement represents our ongoing commitment to innovation, quality, and delivering high-performance semiconductors to our customers worldwide.”
While Samsung has taken the lead in nanosheet production, the company continues to work toward improving yield performance at both the 3nm and 2nm nodes — a critical factor for scaling volume and cost efficiency.
Samsung’s announcement comes as rivals Intel and TSMC ramp up their respective 2nm-class processes:
Intel’s 18A process, which powers the upcoming Intel Core Ultra (Panther Lake) processors, is currently yielding around 50–55%, potentially delaying full-scale shipments to 2026.
TSMC has unveiled its own 2nm platform but has not yet entered mass production.
Samsung’s early mass production gives it a slight competitive edge in the 2nm race — though analysts note the contest is still in its early stages.
For Q3 2025, Samsung reported KRW 86.1 trillion (US$60.5 billion) in consolidated revenue — up 15.4% quarter-over-quarter and 9% year-over-year. Operating profit reached KRW 12.2 trillion (US$8.52 billion). The company’s Device Solutions (DS) Division, which includes the semiconductor unit, achieved a 19% increase in sales, driven by record-high demand for HBM3E and server SSDs.
Samsung’s HBM3E memory is now in full mass production, while HBM4 samples have already been shipped to major customers. The foundry division, in particular, saw a marked improvement in profitability due to higher fab utilization and reduced one-off costs.
“In Q4 2025, we will ramp mass production of 2nm GAA products, increase fab utilization, and optimize costs,” Samsung said in its quarterly report. “In 2026, we will ensure stable supply of 2nm products and HBM4 base-dies, while bringing the Taylor, Texas fab online as planned.”
Samsung Foundry continues to attract high-profile clients — including Apple, DEEPX, and Tesla — signaling renewed confidence in the company’s advanced-node capabilities and manufacturing roadmap.
