Category Archives: Wafer and Foundries

TSMC and GLOBALFOUNDRIES Announce Resolution of Global Disputes Through Broad Global Patent Cross-License

October 29, 2019, anysilicon

Hsinchu, Taiwan R.O.C. and Santa Clara, CA, Oct. 29, 2019 – TSMC and GLOBALFOUNDRIES (GF) today announced they are dismissing all litigation between them as well as those that involve any of their customers. The companies have agreed to a broad life-of-patents cross-license to each other’s worldwide existing semiconductor patents as

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Wafer Capacity by Feature Size Shows Rapid Growth at Below 10nm

October 17, 2019, anysilicon

Leading-edge processes (<28nm) took over as the largest portion in terms of monthly installed capacity available in 2015.  By the end of 2019, <28nm capacity is forecast to represent about 49% of the IC industry’s total capacity, based on information in IC Insights’ Global Wafer Capacity 2019-2023 report. At the very leading

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GLOBALFOUNDRIES and Racyics GmbH Demonstrate Ultra-Low-Power Microcontroller for the Internet of Things

October 14, 2019, anysilicon

Santa Clara, Calif. and Dresden, Germany, Oct. 10, 2019 — A major limiting factor in the growth of Internet of Things (IoT) applications is the amount of power consumed by the edge devices used in IoT networks, and as a result, there is an urgent need to find ways to use

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TSMC’s Leading-Edge Fab Investments Set Stage for Sale Surge in 2H19

September 26, 2019, anysilicon

Taiwan Semiconductor Manufacturing Company’s heavy investments in advanced wafer-fab technology are set to pay off significantly for the world’s largest silicon foundry as it continues the production ramp of 7nm ICs in the second half of this year, according to an analysis in IC Insights’ September Update to the 2019 McClean Report.
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CSEM joins GLOBALFOUNDRIES’ FDXcelerator™ Program bringing ultra-low-Power IP to 22FDX® process

September 24, 2019, anysilicon

Neuchatel, 24 September 2019 – CSEM, a leader in low-power RFIC design and embedded systems, announced today at GLOBALFOUNDRIES (GF) annual Global Technology Conference (GTC) that CSEM is developing ultra-low power Bluetooth Low Energy® (BLE), CMOS radar mmWave IP and embedded
machine-learning accelerators on GLOBALFOUNDRIES (GF) 22nm FD-SOI (22FDX®) platform. Read More

MRAM, a promise beyond eFlash

September 19, 2019, anysilicon

Nowadays, there is broad consensus in the memory industry that the 28nm/22nm silicon lithography nodes will be the last technology nodes for eFlash[2]. This is not because of fundamental scalability limitations, but because of economic barriers. Therefore a new embedded NVM[3] for code/data storage is needed. At the same time, scaling

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