SRAM is the acronym for Static Random Access Memory. SRAM arrays are designed to provide mass storage of data in computer systems today at a high packing density, high speed (or the low access time) and possibly lower power dissipation. The most commonly used SRAM cell is the 6-transistor cell comprising of access transistors, and 2 NMOS and 2 PMOS transistors.


SRAMs are accompanied by various ancillary circuits like pre-charge, sense amplifier, the write data path and the read and write assist circuit. Sizing of the transistors to prevent any contention between the read and the write operations in the SRAM is the most challenging aspect of the SRAM memory design.

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