Singapore, Dec. 4, 2024 – VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC), the joint venture formed in September, 2024 by Vanguard International Semiconductor Corporation (VIS, TPEx 5347) and NXP Semiconductors N.V. (NXP, NASDAQ: NXPI) today celebrated breaking ground at the site of the joint venture’s new 300mm wafer manufacturing facility
Read MoreDecember 2nd, 2024 — Taiwan Semiconductor Manufacturing Co. (TSMC), the world’s leading contract chipmaker, today announced the commencement of equipment installation for its groundbreaking 2-nanometer fabrication facility in Kaohsiung, Taiwan. This milestone marks a significant acceleration of the project, with installation beginning six months ahead of schedule.
Kaohsiung Mayor
GlobalFoundries (GF), a leading semiconductor manufacturer, has been awarded up to $1.5 billion in funding under the US CHIPS and Science Act. This significant investment, part of GF’s larger $13 billion plan to expand its US production capacity over the next decade, will bolster domestic chip production and address critical
Read MoreBRANFORD, Conn. and BLOOMINGTON, Minn. – November 20, 2024 – Quantum-Si Incorporated (Nasdaq: QSI) (“Quantum-Si,” or “QSI”), The Protein Sequencing Company™ and SkyWater Technology (NASDAQ: SKYT), the trusted technology realization partner, announced today they will jointly expand their relationship to support the development of Proteus, Quantum-Si’s next-generation platform designed to transform proteomic research.
Read MoreMigdal Haemek, Israel – November 13, 2024 – Tower Semiconductor (NASDAQ: TSEM & TASE: TSEM) today announced its financial results for the third quarter ended September 30, 2024, reporting continued growth and a significant investment in future capacity.
Third Quarter Highlights:
Revenue reached $371 million, a 6% increase
Read MoreIntroduction to Gate-All-Around (GAA) Transistors
Gate-all-around (GAA) transistors are a newly introduced type of transistor structure: the gate terminal connects with the channel on all sides. Gate-All-Around transistors are a multi-gate field effect transistors type where a silicon nanowire gate moves around the channel by further scaling down FinFET. The