Hsinchu, Taiwan (December 19, 2019) – eMemory Technology, one of the world’s top-ten providers of semiconductor intellectual property (IP), is working with Arm to create new state-of-the-art secure solutions for Internet of Things (IoT) chips.
eMemory will provide its proprietary NeoFuse IP to be implemented into the Arm® CryptoIsland™-300P
Storage technologies are evolving at a high speed, thanks to new generations of memories such as Nandflash, ReRAM, MRAM and other flavors. That leads in an incredible performance increase in term of bandwidth and latency. By the way, security and data privacy features are still an important feature for critical
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Moortec, the go-to leaders of innovative in-chip technologies, today announced that Uhnder’s new automotive radar-on-chip (RoC) uses Moortec’s complete embedded monitoring subsystem solution to optimise the performance and reliability of their innovative Digital Automotive Radar-on-Chip device.
Austin-based Uhnder has produced the first ever digital radar-on-chip which offers smaller size,
SAN JOSE, Calif.– November 20, 2019 –Omni Design Technologies, a leading provider of high-performance, low-power mixed-signal Intellectual Property (IP) solutions, today announced that Alereon, a leader in Ultra-Wideband solutions, has adopted Omni Design’s Analog-to-Digital (ADC) and Digital-to-Analog (DAC) Converters sampling at greater than 1GSPS for its next generation UWB chipset.
“We
Hsinchu, Taiwan, – Nov 20, 2019 — Attopsemi Technology attended SOI Symposium on October 30th, 2019 in Yokohama, Japan and provided a talk “I-fuse™: A Disruptive OTP Technology”. The event was a huge success and attracted several hundreds of attendees.
In a well-received speech during the EDA/IP Session, Shine Chung,
Faraday Technology Corporation(TWSE: 3035), a leading ASIC design service and IP provider, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a leading global semiconductor foundry, today announced the availability of Faraday’s fundamental IP on UMC’s 22nm ultra-low-power (ULP) and ultra-low-leakage (ULL) processes. The silicon-proven 22ULP/ULL fundamental IP, including multi-Vt
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