November 6, 2025 — Volkswagen AG (VW) has announced plans to develop its first in-house artificial intelligence chip in China, as part of a broad effort to strengthen its position in the world’s largest and most competitive electric-vehicle (EV) market.
The project will be carried out through CARIAD SE, VW’s software subsidiary, in collaboration
Woodcliff Lake, NJ — November 5, 2025 — Semiconductor IP provider CAST today announced the release of the KiviPQC™ Family — a suite of hardware IP cores that bring quantum-safe cryptography to ASIC and FPGA designs.
Implementing the NIST-standardized ML-KEM and ML-DSA algorithms (FIPS 203 & 204), the KiviPQC cores enable system designers to
Tel Aviv, Israel — November 5, 2025 — RAAAM Memory Technologies, an Israeli semiconductor startup developing next-generation on-chip memory, today announced it has raised $17.5 million in an oversubscribed Series A funding round led by NXP Semiconductors.
The round also saw participation from a leading multinational networking corporation, IAG Capital Partners, the European Innovation
SUNNYVALE, Calif.– Nov 5th, 2025–Advanced Semiconductor Engineering, Inc. (ASE), a member of ASE Technology Holding Co., Ltd. (NYSE: ASX, TAIEX: 3711), today announced the launch of IDE 2.0, a major upgrade to its Integrated Design Ecosystem™ (IDE) platform. The enhanced platform integrates artificial intelligence (AI) to enable faster design iterations, optimize chip-package interaction
Dresden, Germany – November 1st 2025 – GlobalFoundries (NASDAQ: GFS) today announced a major investment of €1.1 billion (approximately US$1.27 billion) to expand its manufacturing capabilities at its Dresden, Germany facility. The expansion, known as Project SPRINT, will enable production capacity of more than one million wafers per year by the end of 2028, reinforcing
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Seoul, South Korea – 3rd November 2025 – Samsung Electronics today announced that it has officially begun mass production of its next-generation 2-nanometer (nm) process technology, marking a significant milestone in the company’s advanced semiconductor roadmap. The 2nm process, featuring Gate-All-Around (GAA) transistor technology, positions Samsung at the forefront of nanosheet transistor development, ahead of
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