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Scanning Acoustic Microscopy (SAM) is a non-destructive imaging technique widely used in semiconductor failure analysis to inspect structures and interfaces hidden inside IC packages. Unlike optical microscopy, which relies on visible light, or X-ray inspection, which relies primarily on differences in material density and X-ray absorption, SAM uses high-frequency acoustic waves. This
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Finding the right semiconductor failure analysis lab often depends less on the laboratory’s name and more on whether it has the equipment and technical expertise required for your specific failure. A package delamination problem may require Scanning Acoustic Microscopy. A suspected interconnect defect may require FIB cross-sectioning and SEM inspection. Leakage
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Many important semiconductor package defects are completely hidden from optical inspection. A solder ball can contain a void. A bond wire can be broken inside an encapsulated package. A die-attach layer may contain large areas of voiding. A package substrate can contain an open trace, and an advanced package may have
Read MoreScanning Electron Microscopy (SEM) is one of the most important imaging techniques used in semiconductor failure analysis. While optical microscopes remain extremely useful for initial inspection, many semiconductor defects are simply too small to characterize adequately with visible-light microscopy. SEM uses a focused beam of electrons rather than light, allowing engineers
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Many semiconductor failure-analysis techniques require direct access to structures that are hidden inside an IC package. The semiconductor die, bond pads, bond wires and other critical components may be completely covered by epoxy molding compound or other packaging materials. Before these structures can be examined using techniques such as optical microscopy, emission
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Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal
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Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the
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When an integrated circuit fails, one of the first questions is: How is the device failing electrically?
A chip may exhibit excessive leakage current, a short circuit, an open connection, abnormal supply current, a parametric shift or a complete functional failure. Before engineers physically cut into the device, they usually
When a semiconductor device fails, the visible damage is not necessarily the root cause. A damaged metal line, cracked package, leaking transistor or burned bond wire may be the final result of a sequence of events rather than the original problem. The purpose of the semiconductor failure analysis process is therefore to
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When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering
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