Category Archives: IP Cores

Moortec’s In-Chip Monitoring Subsystem Supports Uhnder in Groundbreaking Digital Automotive Radar-on-Chip

December 05, 2019, anysilicon

Moortec, the go-to leaders of innovative in-chip technologies, today announced that Uhnder’s new automotive radar-on-chip (RoC) uses Moortec’s complete embedded monitoring subsystem solution to optimise the performance and reliability of their innovative Digital Automotive Radar-on-Chip device.
 
Austin-based Uhnder has produced the first ever digital radar-on-chip which offers smaller size,

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Alereon Adopts Omni Design’s Low Power Analog-to-Digital and Digital-to-Analog Converters for Ultra-Wideband Applications

November 20, 2019, anysilicon

SAN JOSE, Calif.– November 20, 2019 –Omni Design Technologies, a leading provider of high-performance, low-power mixed-signal Intellectual Property (IP) solutions, today announced that Alereon, a leader in Ultra-Wideband solutions, has adopted Omni Design’s Analog-to-Digital (ADC) and Digital-to-Analog (DAC) Converters sampling at greater than 1GSPS for its next generation UWB chipset.
“We

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Attopsemi Technology Attended 4th Japan SOI Symposium and Presented a Talk “I-fuse: A Disruptive OTP Technology”

November 20, 2019, anysilicon

Hsinchu, Taiwan, – Nov 20, 2019 — Attopsemi Technology attended SOI Symposium on October 30th, 2019 in Yokohama, Japan and provided a talk “I-fuse™: A Disruptive OTP Technology”. The event was a huge success and attracted several hundreds of attendees.
 
In a well-received speech during the EDA/IP Session, Shine Chung,

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Faraday and UMC Collaborate to Launch a Complete Set of 22nm Fundamental IP

November 18, 2019, anysilicon

Faraday Technology Corporation(TWSE: 3035), a leading ASIC design service and IP provider, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a leading global semiconductor foundry, today announced the availability of Faraday’s fundamental IP on UMC’s 22nm ultra-low-power (ULP) and ultra-low-leakage (ULL) processes. The silicon-proven 22ULP/ULL fundamental IP, including multi-Vt

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SmartDV to Exhibit at SemIsrael Expo, ICCAD China 2019

November 07, 2019, anysilicon

SmartDV™ Technologies will exhibit at SemIsrael Expo 2019 in Airport City, Israel, November 19 and ICCAD China 2019 November 21-22 in Nanjing, China.
 
At both events, SmartDV will showcase why it is the Proven and Trusted choice for Verification and Design Intellectual Property (IP), including new additions to its

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Sofics Analog I/O’s and ESD clamps proven for TSMC 16nm, 12nm and 7nm FinFET processes

October 28, 2019, anysilicon

Belgium, October 28, 2019 – Sofics bvba (www.sofics.com), a leading semiconductor integrated circuit IP provider announced that its TakeCharge® Electrostatic Discharge (ESD) portfolio is silicon proven on TSMC’s advanced 16nm, 12nm and 7nm FinFET processes. More than 80 fabless companies use Sofics solutions to enable higher performance, higher robustness and

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