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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

The 6 Must-Do’s for Semiconductor Fabless Start-ups

Getting funding for a semiconductor startup is not getting easier. According to CBIngishts, there have been fewer than 20 Angel/Seed and Series A deals in the USA in each year since 2009.   So where is all the funding channeled to? In 2013, close to a quarter of all VC funding was ...

Transmission Electron Microscopy (TEM) for Semiconductor Failure Analysis

Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone. TEM works by transmitting a high-energy electron beam through an ...

Choosing, Integrating and Managing Chiplets

Chiplets are a relatively recent advancement in semiconductor technology that involves breaking down a traditional monolithic integrated circuit (IC) into smaller, individual semiconductor components or "chiplets." These chiplets can be designed and manufactured independently, and then they are integrated onto a common substrate or package to create a more complex ...

SEM Analysis for Semiconductor Failure Analysis

Scanning Electron Microscopy (SEM) is one of the most important imaging techniques used in semiconductor failure analysis. While optical microscopes remain extremely useful for initial inspection, many semiconductor defects are simply too small to characterize adequately with visible-light microscopy. SEM uses a focused beam of electrons rather than light, allowing engineers ...

Faraday Delivers Latest SerDes IP to Complete Interface Lineup on UMC’s 22nm Platform

Hsinchu, Taiwan -- June 24, 2025 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced the availability of its 10G SerDes IP on UMC’s 22nm process technology. Designed to meet the increasing demands of high-speed data transmission, the new SerDes IP supports a broad ...

Creonic

Germany

Creonic is the leader in ready-for-use IP cores, offering a rich product portfolio for wired, wireless, fiber and free-space optical communications.

Semiconductor Failure Analysis: The Complete Guide to IC Failure Analysis

Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.   Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.   Semiconductor failure analysis (FA) is the systematic ...

Understanding Silicon Photonics Market, Technology and Applications

With a rapid progression in the applications involving artificial intelligence, data generation has been increased exponentially in last few years. It has been estimated that in 2018, 2,5 quintillion bytes of data is generated every day [1]. This huge data generation puts enormous computational requirements on telecom platforms and  data ...

RoodMicrotec

Germany

RoodMicrotec provides SCM, Test, Qualification, Failure Analysis and Engineering services to automotive, aerospace, industrial, consumer, medical markets and fabless companies.