With the creeping rise in the price of gold, many microelectronics manufacturing companies have been looking for alternatives to reduce the cost of ball bonding. Recently, the trend has been to look into the use copper wire. However, there are many drawbacks to using copper wire, including the short shelf ...
Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...
With a rapid progression in the applications involving artificial intelligence, data generation has been increased exponentially in last few years. It has been estimated that in 2018, 2,5 quintillion bytes of data is generated every day [1]. This huge data generation puts enormous computational requirements on telecom platforms and data ...
The semiconductor industry went through several stages of evolution, beginning with the Metal Oxide Semiconductor (MOS) Field-Effect Transistor (FET) which was first proposed by Lilienfeld and Heil in the 1930s, moving on to bipolar in the 1950s and N-channel metal-oxide semiconductor (NMOS) in 1970s, and ultimately becoming the standard in ...
October 15, 2024 – Xscape Photonics, a pioneer in next-generation data center connectivity, today announced the closing of a $44 million Series A funding round, bringing its total funding to $57 million. The round was led by IAG Capital Partners and included participation from Cisco Systems Inc., Nvidia Corp., Altair ...
Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...
Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
Hsinchu, Taiwan -- June 24, 2025 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced the availability of its 10G SerDes IP on UMC’s 22nm process technology. Designed to meet the increasing demands of high-speed data transmission, the new SerDes IP supports a broad ...
Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.
Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.
Semiconductor failure analysis (FA) is the systematic ...
Kaiserslautern, Germany – May 21, 2025 – Creonic GmbH, a leading provider of ready-to-use IP cores for ASIC and FPGA applications, announces the release of its new oFEC (Open Forward Error Correction) codec IP core. The solution supports next-generation optical and high-speed communication systems and is now available in both ...
