Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.
Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.
Semiconductor failure analysis (FA) is the systematic ...
Silicon Valley, CA (Feb 9, 2021) - Integra Technologies, a world leader in semiconductor packaging, assembly, test, characterization and related services, today announced the successful implementation of a high accuracy fiber array waveguide attachment system focused on the Silicon Photonics market. This latest set of tools is based on the double-sided HexNano ...
Hsinchu, Taiwan -- June 24, 2025 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced the availability of its 10G SerDes IP on UMC’s 22nm process technology. Designed to meet the increasing demands of high-speed data transmission, the new SerDes IP supports a broad ...
Package failure analysis is the systematic investigation of defects and failures originating within semiconductor packaging, interconnects, solder connections, die attach, bond wires, redistribution layers and other structures that connect the semiconductor die to the outside system.
A semiconductor device may fail electrical testing even though the silicon itself is functioning correctly. ...
Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...
Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...
When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...
Dr. Morris Chang is not my hero. He might be the most important person in the semiconductor industry in our lifetime, but he is not my hero. I have nothing against him. I’ve never met him and probably will never will. Instead, I meet my heroes usually after tape-out, when ...
