Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...
With a rapid progression in the applications involving artificial intelligence, data generation has been increased exponentially in last few years. It has been estimated that in 2018, 2,5 quintillion bytes of data is generated every day [1]. This huge data generation puts enormous computational requirements on telecom platforms and data ...
Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...
Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased.
Abnormal photon emission ...
Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
When a semiconductor device fails, the visible damage is not necessarily the root cause. A damaged metal line, cracked package, leaking transistor or burned bond wire may be the final result of a sequence of events rather than the original problem. The purpose of the semiconductor failure analysis process is therefore to ...
Nanoprobing is an advanced electrical characterization and fault-localization technique used in semiconductor failure analysis to directly investigate individual transistors, contacts, vias and interconnect structures inside an integrated circuit.
Instead of relying only on package-level electrical measurements, nanoprobing allows extremely small conductive structures on a deprocessed semiconductor die to be contacted using ...
Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.
Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.
Semiconductor failure analysis (FA) is the systematic ...
SINGAPORE and SAN JOSE, Calif., Nov. 02, 2016 (GLOBE NEWSWIRE) -- Broadcom Limited (Nasdaq:AVGO) and Brocade Communications Systems, Inc. (Nasdaq:BRCD) today announced that they have entered into a definitive agreement under which Broadcom will acquire Brocade, a leader in Fibre Channel storage area network (“FC SAN”) switching and IP networking, for $12.75 ...
