Imagine a world where data moves at the speed of light—literally. Silicon photonics makes this possible, merging optics with the familiar silicon used in traditional electronics.
This advanced technology, originating from the 1980s, stands today as a pivotal innovation in microelectronics. It offers faster data transfer rates and lower power consumption ...
Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...
Hsinchu, Taiwan -- July 11, 2023 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, launched its SerDes (serializer/deserializer) total solution comprises SerDes IP design on UMC 28nm and the corresponding IP advanced (IPA) service which includes IP subsystem integration, PHY hardcore implementation, and signal integrity/power ...
Kaiserslautern, Germany – May 21, 2025 – Creonic GmbH, a leading provider of ready-to-use IP cores for ASIC and FPGA applications, announces the release of its new oFEC (Open Forward Error Correction) codec IP core. The solution supports next-generation optical and high-speed communication systems and is now available in both ...
The factors affecting silicon wafer cost are numerous. From the resistivity required for different applications to the physical size of the wafers, and not least the quality grades that separate the pristine from the less perfect; each aspect intricately influences the cost.
As we embark on this explanation, we'll unwrap the ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Scanning Acoustic Microscopy (SAM) is a non-destructive imaging technique widely used in semiconductor failure analysis to inspect structures and interfaces hidden inside IC packages. Unlike optical microscopy, which relies on visible light, or X-ray inspection, which relies primarily on differences in material density and X-ray absorption, SAM uses high-frequency acoustic waves. This ...
The Qmode project is funded with an MIT-R&D collaboration project grant from the Provincie Overijssel, dedicated to stimulate the innovation and development of products, processes and services of local SMEs working in the Dutch Top Sectors. The collaboration established in Qmode will help QuiX secure a leading position in the ...
Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...
