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Choosing, Integrating and Managing Chiplets

Chiplets are a relatively recent advancement in semiconductor technology that involves breaking down a traditional monolithic integrated circuit (IC) into smaller, individual semiconductor components or "chiplets." These chiplets can be designed and manufactured independently, and then they are integrated onto a common substrate or package to create a more complex ...

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Emission Microscopy (EMMI) for Semiconductor Failure Analysis

Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased. Abnormal photon emission ...

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Creonic’s DVB-S2 and DVB-S2X IP Cores Now Support the New DVB-NIP Standard

Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.   The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.  With ...

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Physical Failure Analysis (PFA) of Semiconductor Devices

Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong.  Was a metal interconnect broken?  Did a via fail?  Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...

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ASIC Design for Silicon Photonics

Imagine a world where data moves at the speed of light—literally. Silicon photonics makes this possible, merging optics with the familiar silicon used in traditional electronics.   This advanced technology, originating from the 1980s, stands today as a pivotal innovation in microelectronics. It offers faster data transfer rates and lower power consumption ...

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BCD, CMOS, FinFET, SOI, GaN & SiC Technologies Explained

Introduction to Semiconductor Semiconductors have a small energy gap between the conduction and valance bands, and their conductivity is between insulators and conductors. At absolute zero temperature, semiconductor materials are pure insulators and gradually increase with temperature. Temperature and doping are the two mechanisms to manage the conductivity of semiconductors. Doping ...

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China Imposes Export Restrictions on Key Minerals to the United States

The Chinese Ministry of Commerce today announced immediate export restrictions on gallium, germanium, antimony, and super-hard materials to the United States. This action cites national security concerns and represents a significant escalation of trade tensions between the two countries. The restrictions follow recent U.S. actions to curb exports of semiconductor-related ...

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Focused Ion Beam (FIB): Semiconductor Failure Analysis

Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...

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Introduction to Silicon-Germanium (SiGe) Technology

Overview of Silicon-Germanium (SiGe) Technology and Historical Development   Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...

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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

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