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Transmission Electron Microscopy (TEM) for Semiconductor Failure Analysis

Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone. TEM works by transmitting a high-energy electron beam through an ...

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Creonic’s DVB-S2 and DVB-S2X IP Cores Now Support the New DVB-NIP Standard

Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.   The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.  With ...

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RoodMicrotec

Germany

RoodMicrotec provides SCM, Test, Qualification, Failure Analysis and Engineering services to automotive, aerospace, industrial, consumer, medical markets and fabless companies.

Services

Supply Chain Management Services – Turnkey Solutions, Engineering services, test program development, Qualification & Reliability investigations, Optomechanical qualifications, Failure & Technological analysis, Device testing, device programming, end-of-line services

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Chipmaker Broadcom to Acquire Brocade for $5.9 Billion

SINGAPORE and SAN JOSE, Calif., Nov. 02, 2016 (GLOBE NEWSWIRE) -- Broadcom Limited (Nasdaq:AVGO) and Brocade Communications Systems, Inc. (Nasdaq:BRCD) today announced that they have entered into a definitive agreement under which Broadcom will acquire Brocade, a leader in Fibre Channel storage area network (“FC SAN”) switching and IP networking, for $12.75 ...

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Comparing Au, Pt, Ag and Cu Wire Bonding

With the creeping rise in the price of gold, many microelectronics manufacturing companies have been looking for alternatives to reduce the cost of ball bonding. Recently, the trend has been to look into the use copper wire. However, there are many drawbacks to using copper wire, including the short shelf ...

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IC Failure Analysis Techniques: A Complete Guide

When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...

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Common IC Failure Mechanisms and Their Causes

Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...

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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

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Choosing, Integrating and Managing Chiplets

Chiplets are a relatively recent advancement in semiconductor technology that involves breaking down a traditional monolithic integrated circuit (IC) into smaller, individual semiconductor components or "chiplets." These chiplets can be designed and manufactured independently, and then they are integrated onto a common substrate or package to create a more complex ...

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Semiconductor Failure Analysis: The Complete Guide to IC Failure Analysis

Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.   Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.   Semiconductor failure analysis (FA) is the systematic ...

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