Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
Introduction to Semiconductor
Semiconductors have a small energy gap between the conduction and valance bands, and their conductivity is between insulators and conductors. At absolute zero temperature, semiconductor materials are pure insulators and gradually increase with temperature. Temperature and doping are the two mechanisms to manage the conductivity of semiconductors. Doping ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...
IC short circuit failure analysis is the process of determining where an unintended electrical connection exists inside a semiconductor device, package or interconnect structure and identifying the physical defect that created the short.
A short circuit may initially appear only as excessive supply current, unexpectedly low resistance between two nodes, abnormal ...
Scanning Electron Microscopy (SEM) is one of the most important imaging techniques used in semiconductor failure analysis. While optical microscopes remain extremely useful for initial inspection, many semiconductor defects are simply too small to characterize adequately with visible-light microscopy. SEM uses a focused beam of electrons rather than light, allowing engineers ...
Hsinchu, Taiwan -- July 11, 2023 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, launched its SerDes (serializer/deserializer) total solution comprises SerDes IP design on UMC 28nm and the corresponding IP advanced (IPA) service which includes IP subsystem integration, PHY hardcore implementation, and signal integrity/power ...
The Qmode project is funded with an MIT-R&D collaboration project grant from the Provincie Overijssel, dedicated to stimulate the innovation and development of products, processes and services of local SMEs working in the Dutch Top Sectors. The collaboration established in Qmode will help QuiX secure a leading position in the ...
SINGAPORE and SAN JOSE, Calif., Nov. 02, 2016 (GLOBE NEWSWIRE) -- Broadcom Limited (Nasdaq:AVGO) and Brocade Communications Systems, Inc. (Nasdaq:BRCD) today announced that they have entered into a definitive agreement under which Broadcom will acquire Brocade, a leader in Fibre Channel storage area network (“FC SAN”) switching and IP networking, for $12.75 ...
Many semiconductor failure-analysis techniques require direct access to structures that are hidden inside an IC package. The semiconductor die, bond pads, bond wires and other critical components may be completely covered by epoxy molding compound or other packaging materials. Before these structures can be examined using techniques such as optical microscopy, emission ...
