Many semiconductor failure-analysis techniques require direct access to structures that are hidden inside an IC package. The semiconductor die, bond pads, bond wires and other critical components may be completely covered by epoxy molding compound or other packaging materials. Before these structures can be examined using techniques such as optical microscopy, emission ...
When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...
Many important semiconductor package defects are completely hidden from optical inspection. A solder ball can contain a void. A bond wire can be broken inside an encapsulated package. A die-attach layer may contain large areas of voiding. A package substrate can contain an open trace, and an advanced package may have ...
When a semiconductor device fails, the visible damage is not necessarily the root cause. A damaged metal line, cracked package, leaking transistor or burned bond wire may be the final result of a sequence of events rather than the original problem. The purpose of the semiconductor failure analysis process is therefore to ...
Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...
Lately, there’s been a lot of buzz about silicon photonics in the data center industry. What’s it all about? The ever-expanding digital universe is being driven by cloud computing, mobile data, video streaming, and Internet-of-Things (IoT). Today, it’s estimated that by end of 2016, more than 6 zettabytes (i.e., the ...
Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.
Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.
Semiconductor failure analysis (FA) is the systematic ...
Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...
The NVM Express (NVMe) specification has been introduced in 2011. Five years later, it is definitely adopted as the new standard storage interface for Solid-State Drives (SSD). Even if SAS and SATA SSDs are still dominating the market (in unit shipment), the PCIe SSD market share is growing fast and ...
Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
