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Introduction to Silicon-Germanium (SiGe) Technology

Overview of Silicon-Germanium (SiGe) Technology and Historical Development   Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...

Electrical Failure Analysis (EFA) of Integrated Circuits

When an integrated circuit fails, one of the first questions is: How is the device failing electrically?   A chip may exhibit excessive leakage current, a short circuit, an open connection, abnormal supply current, a parametric shift or a complete functional failure. Before engineers physically cut into the device, they usually want to ...

Understanding Silicon Photonics Market, Technology and Applications

With a rapid progression in the applications involving artificial intelligence, data generation has been increased exponentially in last few years. It has been estimated that in 2018, 2,5 quintillion bytes of data is generated every day [1]. This huge data generation puts enormous computational requirements on telecom platforms and  data ...

The Ultimate Guide to: BiCMOS

The semiconductor industry went through several stages of evolution, beginning with the Metal Oxide Semiconductor (MOS) Field-Effect Transistor (FET) which was first proposed by Lilienfeld and Heil in the 1930s, moving on to bipolar in the 1950s and N-channel metal-oxide semiconductor (NMOS) in 1970s, and ultimately becoming the standard in ...

Physical Failure Analysis (PFA) of Semiconductor Devices

Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong.  Was a metal interconnect broken?  Did a via fail?  Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...

Nanoprobing for Semiconductor Failure Analysis

Nanoprobing is an advanced electrical characterization and fault-localization technique used in semiconductor failure analysis to directly investigate individual transistors, contacts, vias and interconnect structures inside an integrated circuit. Instead of relying only on package-level electrical measurements, nanoprobing allows extremely small conductive structures on a deprocessed semiconductor die to be contacted using ...

PHIX Photonics Assembly

The Netherlands

Packaging foundry aiming to become world leader in the assembly of photonic ICs in scalable volumes.

Emission Microscopy (EMMI) for Semiconductor Failure Analysis

Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased. Abnormal photon emission ...

OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

INTEGRA TECHNOLOGIES EXPANDS SILICON PHOTONICS CAPABILITIES

Silicon Valley, CA (Feb 9, 2021) - Integra Technologies, a world leader in semiconductor packaging, assembly, test, characterization and related services, today announced the successful implementation of a high accuracy fiber array waveguide attachment system focused on the Silicon Photonics market. This latest set of tools is based on the double-sided HexNano ...