What is a Circuit Edit?
A circuit edit is when you need to modify an existing ASIC or integrated circuit for whatever reason. This is usually done with the help of an ion beam that is focused onto the chip to modify it as per the request of the designer. Engineers ...
Scanning Electron Microscopy (SEM) is one of the most important imaging techniques used in semiconductor failure analysis. While optical microscopes remain extremely useful for initial inspection, many semiconductor defects are simply too small to characterize adequately with visible-light microscopy. SEM uses a focused beam of electrons rather than light, allowing engineers ...
Scanning Acoustic Microscopy (SAM) is a non-destructive imaging technique widely used in semiconductor failure analysis to inspect structures and interfaces hidden inside IC packages. Unlike optical microscopy, which relies on visible light, or X-ray inspection, which relies primarily on differences in material density and X-ray absorption, SAM uses high-frequency acoustic waves. This ...
Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.
The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.
With ...
Dr. Morris Chang is not my hero. He might be the most important person in the semiconductor industry in our lifetime, but he is not my hero. I have nothing against him. I’ve never met him and probably will never will. Instead, I meet my heroes usually after tape-out, when ...
IC short circuit failure analysis is the process of determining where an unintended electrical connection exists inside a semiconductor device, package or interconnect structure and identifying the physical defect that created the short.
A short circuit may initially appear only as excessive supply current, unexpectedly low resistance between two nodes, abnormal ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone.
TEM works by transmitting a high-energy electron beam through an ...
Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased.
Abnormal photon emission ...
Overview of Silicon-Germanium (SiGe) Technology and Historical Development
Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...
