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Semiconductor Failure Analysis: The Complete Guide to IC Failure Analysis

Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.   Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.   Semiconductor failure analysis (FA) is the systematic ...

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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

Common IC Failure Mechanisms and Their Causes

Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...

Gallium Arsenide (GaAs) Overview

Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...

Introduction to Silicon-Germanium (SiGe) Technology

Overview of Silicon-Germanium (SiGe) Technology and Historical Development   Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...

Focused Ion Beam (FIB): Semiconductor Failure Analysis

Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...

Semiconductor Failure Analysis Process: From Failure to Root Cause

When a semiconductor device fails, the visible damage is not necessarily the root cause. A damaged metal line, cracked package, leaking transistor or burned bond wire may be the final result of a sequence of events rather than the original problem. The purpose of the semiconductor failure analysis process is therefore to ...

RoodMicrotec

Germany

RoodMicrotec provides SCM, Test, Qualification, Failure Analysis and Engineering services to automotive, aerospace, industrial, consumer, medical markets and fabless companies.

Creonic’s DVB-S2 and DVB-S2X IP Cores Now Support the New DVB-NIP Standard

Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.   The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.  With ...