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Creonic Releases DVB-S2X Demodulator Version 6.0 with Increased Bitwidth and Annex M Support

Kaiserslautern, Germany – July 31, 2025 – Creonic GmbH, the leading provider of cutting-edge communications IP cores, announces the release of Version 6.0 of its DVB-S2X Demodulator IP core. This major update introduces powerful enhancements that expand the configurability and technical performance of one of Creonic’s most mature and widely ...

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Faraday's Launched SerDes Advanced Service to Accelerate ASICs into Production

Hsinchu, Taiwan -- July 11, 2023 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, launched its SerDes (serializer/deserializer) total solution comprises SerDes IP design on UMC 28nm and the corresponding IP advanced (IPA) service which includes IP subsystem integration, PHY hardcore implementation, and signal integrity/power ...

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Analogue Insight

UK

Seamlessly Bridging the Analogue and Digital Worlds for Tomorrow's Chiplet Solutions.

Services

Partnership Programs, Standard Chiplet Design, Custom SoC and IP Design & Licensing, Comprehensive Design Services, Consulting

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INTEGRA TECHNOLOGIES EXPANDS SILICON PHOTONICS CAPABILITIES

Silicon Valley, CA (Feb 9, 2021) - Integra Technologies, a world leader in semiconductor packaging, assembly, test, characterization and related services, today announced the successful implementation of a high accuracy fiber array waveguide attachment system focused on the Silicon Photonics market. This latest set of tools is based on the double-sided HexNano ...

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IC Failure Analysis Techniques: A Complete Guide

When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...

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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

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Xscape Photonics Secures $44 Million in Series A Funding to Revolutionize Data Center Connectivity

October 15, 2024 – Xscape Photonics, a pioneer in next-generation data center connectivity, today announced the closing of a $44 million Series A funding round, bringing its total funding to $57 million. The round was led by IAG Capital Partners and included participation from Cisco Systems Inc., Nvidia Corp., Altair ...

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Emission Microscopy (EMMI) for Semiconductor Failure Analysis

Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased. Abnormal photon emission ...

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Package Failure Analysis Services | IC Package FA Lab

Package failure analysis is the systematic investigation of defects and failures originating within semiconductor packaging, interconnects, solder connections, die attach, bond wires, redistribution layers and other structures that connect the semiconductor die to the outside system. A semiconductor device may fail electrical testing even though the silicon itself is functioning correctly. ...

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Physical Failure Analysis (PFA) of Semiconductor Devices

Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong.  Was a metal interconnect broken?  Did a via fail?  Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...

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