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Creonic’s DVB-S2 and DVB-S2X IP Cores Now Support the New DVB-NIP Standard

Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.   The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.  With ...

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Xscape Photonics Secures $44 Million in Series A Funding to Revolutionize Data Center Connectivity

October 15, 2024 – Xscape Photonics, a pioneer in next-generation data center connectivity, today announced the closing of a $44 million Series A funding round, bringing its total funding to $57 million. The round was led by IAG Capital Partners and included participation from Cisco Systems Inc., Nvidia Corp., Altair ...

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Semiconductor Failure Analysis Labs by Equipment & Technique

Finding the right semiconductor failure analysis lab often depends less on the laboratory's name and more on whether it has the equipment and technical expertise required for your specific failure. A package delamination problem may require Scanning Acoustic Microscopy. A suspected interconnect defect may require FIB cross-sectioning and SEM inspection. Leakage ...

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Why Dr. Morris Chang is not My Hero. A tribute to Failure Analysis Engineers

  Dr. Morris Chang is not my hero. He might be the most important person in the semiconductor industry in our lifetime, but he is not my hero. I have nothing against him. I’ve never met him and probably will never will. Instead, I meet my heroes usually after tape-out, when ...

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China Imposes Export Restrictions on Key Minerals to the United States

The Chinese Ministry of Commerce today announced immediate export restrictions on gallium, germanium, antimony, and super-hard materials to the United States. This action cites national security concerns and represents a significant escalation of trade tensions between the two countries. The restrictions follow recent U.S. actions to curb exports of semiconductor-related ...

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Introduction to Silicon-Germanium (SiGe) Technology

Overview of Silicon-Germanium (SiGe) Technology and Historical Development   Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...

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The 6 Must-Do’s for Semiconductor Fabless Start-ups

Getting funding for a semiconductor startup is not getting easier. According to CBIngishts, there have been fewer than 20 Angel/Seed and Series A deals in the USA in each year since 2009.   So where is all the funding channeled to? In 2013, close to a quarter of all VC funding was ...

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Transmission Electron Microscopy (TEM) for Semiconductor Failure Analysis

Transmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone. TEM works by transmitting a high-energy electron beam through an ...

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IC Failure Analysis Techniques: A Complete Guide

When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...

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Common IC Failure Mechanisms and Their Causes

Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...

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