Chiplets are a relatively recent advancement in semiconductor technology that involves breaking down a traditional monolithic integrated circuit (IC) into smaller, individual semiconductor components or "chiplets." These chiplets can be designed and manufactured independently, and then they are integrated onto a common substrate or package to create a more complex ...
Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...
Nanoprobing is an advanced electrical characterization and fault-localization technique used in semiconductor failure analysis to directly investigate individual transistors, contacts, vias and interconnect structures inside an integrated circuit.
Instead of relying only on package-level electrical measurements, nanoprobing allows extremely small conductive structures on a deprocessed semiconductor die to be contacted using ...
Overview of Silicon-Germanium (SiGe) Technology and Historical Development
Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Hsinchu, Taiwan -- July 11, 2023 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, launched its SerDes (serializer/deserializer) total solution comprises SerDes IP design on UMC 28nm and the corresponding IP advanced (IPA) service which includes IP subsystem integration, PHY hardcore implementation, and signal integrity/power ...
Emission Microscopy (EMMI) is an optical fault-localization technique used in semiconductor failure analysis to identify electrically active defects inside integrated circuits. Instead of physically opening individual circuit structures and searching for damage, emission microscopy detects extremely weak light generated while a semiconductor device is electrically operating or biased.
Abnormal photon emission ...
Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...
Scanning Acoustic Microscopy (SAM) is a non-destructive imaging technique widely used in semiconductor failure analysis to inspect structures and interfaces hidden inside IC packages. Unlike optical microscopy, which relies on visible light, or X-ray inspection, which relies primarily on differences in material density and X-ray absorption, SAM uses high-frequency acoustic waves. This ...
Many semiconductor failure-analysis techniques require direct access to structures that are hidden inside an IC package. The semiconductor die, bond pads, bond wires and other critical components may be completely covered by epoxy molding compound or other packaging materials. Before these structures can be examined using techniques such as optical microscopy, emission ...
