Semiconductor devices can fail for many reasons: manufacturing defects, electrical overstress, electrostatic discharge, contamination, packaging problems, excessive temperature, mechanical stress, aging or defects introduced during assembly.
Finding the actual cause of an IC failure, however, is rarely as simple as looking at the damaged device.
Semiconductor failure analysis (FA) is the systematic ...
Integrated circuits can fail for many different reasons. Some failures originate inside the semiconductor die, while others result from packaging, manufacturing, assembly, electrical overstress or the environment in which the device operates. Common IC failure mechanisms include electrostatic discharge (ESD), electrical overstress (EOS), electromigration, dielectric breakdown, interconnect defects, corrosion, contamination, thermal ...
OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems.
The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...
Palo Alto, CA - 25 March 2025. Sarcina Technology, a global semiconductor packaging specialist, is excited to announce the launch of its innovative AI platform to enable advanced AI packaging solutions that can be tailored to meet specific customer requirements. Leveraging ASE’s FOCoS-CL (Fan-Out Chip-on-Substrate-Chip Last) assembly technology, this platform ...
Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.
The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.
With ...
The semiconductor industry went through several stages of evolution, beginning with the Metal Oxide Semiconductor (MOS) Field-Effect Transistor (FET) which was first proposed by Lilienfeld and Heil in the 1930s, moving on to bipolar in the 1950s and N-channel metal-oxide semiconductor (NMOS) in 1970s, and ultimately becoming the standard in ...
SINGAPORE and SAN JOSE, Calif., Nov. 02, 2016 (GLOBE NEWSWIRE) -- Broadcom Limited (Nasdaq:AVGO) and Brocade Communications Systems, Inc. (Nasdaq:BRCD) today announced that they have entered into a definitive agreement under which Broadcom will acquire Brocade, a leader in Fibre Channel storage area network (“FC SAN”) switching and IP networking, for $12.75 ...
Gallium arsenide (GaAs) technology is a type of semiconductor material used in the manufacturing of various electronic devices. It is known for its high electron mobility, which allows it to operate at higher speeds and with lower power consumption compared to other semiconductor materials such as silicon. GaAs technology is ...
Hsinchu, Taiwan -- June 24, 2025 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced the availability of its 10G SerDes IP on UMC’s 22nm process technology. Designed to meet the increasing demands of high-speed data transmission, the new SerDes IP supports a broad ...
Getting funding for a semiconductor startup is not getting easier. According to CBIngishts, there have been fewer than 20 Angel/Seed and Series A deals in the USA in each year since 2009.
So where is all the funding channeled to? In 2013, close to a quarter of all VC funding was ...
