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IC short circuit failure analysis is the process of determining where an unintended electrical connection exists inside a semiconductor device, package or interconnect structure and identifying the physical defect that created the short. A short circuit may initially appear only as excessive supply current, unexpectedly low resistance between two nodes, abnormal ...
With the creeping rise in the price of gold, many microelectronics manufacturing companies have been looking for alternatives to reduce the cost of ball bonding. Recently, the trend has been to look into the use copper wire. However, there are many drawbacks to using copper wire, including the short shelf ...
Germany
RoodMicrotec provides SCM, Test, Qualification, Failure Analysis and Engineering services to automotive, aerospace, industrial, consumer, medical markets and fabless companies.
Supply Chain Management Services – Turnkey Solutions, Engineering services, test program development, Qualification & Reliability investigations, Optomechanical qualifications, Failure & Technological analysis, Device testing, device programming, end-of-line services
View vendor pageTransmission Electron Microscopy (TEM) is one of the highest-resolution physical-analysis techniques used in semiconductor failure analysis. It allows failure analysts to examine extremely small structural and material anomalies that may be impossible to characterize using optical microscopy or conventional SEM alone. TEM works by transmitting a high-energy electron beam through an ...
Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies. The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery. With ...
The NVM Express (NVMe) specification has been introduced in 2011. Five years later, it is definitely adopted as the new standard storage interface for Solid-State Drives (SSD). Even if SAS and SATA SSDs are still dominating the market (in unit shipment), the PCIe SSD market share is growing fast and ...
Overview of Silicon-Germanium (SiGe) Technology and Historical Development Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...
When an integrated circuit fails, one of the first questions is: How is the device failing electrically? A chip may exhibit excessive leakage current, a short circuit, an open connection, abnormal supply current, a parametric shift or a complete functional failure. Before engineers physically cut into the device, they usually want to ...
Once an electrical failure has been localized inside an integrated circuit, the next challenge is determining what physically went wrong. Was a metal interconnect broken? Did a via fail? Is there contamination between two structures? Has a dielectric layer broken down? Is a transistor structure abnormal? Or did the failure originate in the ...
Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...
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