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OBIRCH for Semiconductor Failure Analysis: Resistive Fault Localization

OBIRCH (Optical Beam Induced Resistance Change) is a laser-based fault-localization technique used in semiconductor failure analysis to identify electrically abnormal regions such as resistive shorts, leakage paths, defective vias and interconnect problems. The technique works by scanning a focused laser across an electrically biased semiconductor device. Local laser heating changes the ...

IC Failure Analysis Techniques: A Complete Guide

When an integrated circuit fails, identifying the damaged component is only part of the challenge. Engineers must determine where the failure occurred, what physical or electrical mechanism caused it, and ultimately why it happened. This requires a combination of specialized IC failure analysis techniques. Some techniques detect electrical abnormalities without physically altering ...

RoodMicrotec

Germany

RoodMicrotec provides SCM, Test, Qualification, Failure Analysis and Engineering services to automotive, aerospace, industrial, consumer, medical markets and fabless companies.

BCD, CMOS, FinFET, SOI, GaN & SiC Technologies Explained

Introduction to Semiconductor Semiconductors have a small energy gap between the conduction and valance bands, and their conductivity is between insulators and conductors. At absolute zero temperature, semiconductor materials are pure insulators and gradually increase with temperature. Temperature and doping are the two mechanisms to manage the conductivity of semiconductors. Doping ...

Silicon Photonics Inflection Point - It’s Not ‘If,’ It’s ‘When’

Lately, there’s been a lot of buzz about silicon photonics in the data center industry. What’s it all about? The ever-expanding digital universe is being driven by cloud computing, mobile data, video streaming, and Internet-of-Things (IoT). Today, it’s estimated that by end of 2016, more than 6 zettabytes (i.e., the ...

Creonic’s DVB-S2 and DVB-S2X IP Cores Now Support the New DVB-NIP Standard

Creonic’s DVB-S2 and DVB-S2X IP cores now include support for the new DVB-NIP standard on physical layer — an important step toward seamless integration of satellite and IP-based network technologies.   The DVB-NIP standard is designed to facilitate the native transport of IP over satellite networks, extending the capabilities of DVB-S2X by streamlining packet-based data delivery.  With ...

X-Ray Inspection for Semiconductor Package Failure Analysis

Many important semiconductor package defects are completely hidden from optical inspection. A solder ball can contain a void. A bond wire can be broken inside an encapsulated package. A die-attach layer may contain large areas of voiding. A package substrate can contain an open trace, and an advanced package may have ...

Introduction to Silicon-Germanium (SiGe) Technology

Overview of Silicon-Germanium (SiGe) Technology and Historical Development   Shockley's early transistor game most likely inspired the notion of fusing silicon (Si) and germanium (Ge) to create an alloy for use in transistor engineering. However, this concept has just become a reality in the last 15 years due to the challenges associated ...

Creonic Releases DVB-S2X Demodulator Version 6.0 with Increased Bitwidth and Annex M Support

Kaiserslautern, Germany – July 31, 2025 – Creonic GmbH, the leading provider of cutting-edge communications IP cores, announces the release of Version 6.0 of its DVB-S2X Demodulator IP core. This major update introduces powerful enhancements that expand the configurability and technical performance of one of Creonic’s most mature and widely ...

Focused Ion Beam (FIB): Semiconductor Failure Analysis

Focused Ion Beam (FIB) technology is one of the most versatile tools used in semiconductor failure analysis and microelectronics characterization. A FIB system directs a tightly focused beam of ions onto a sample. By controlling the beam current, energy, position and scanning pattern, engineers can remove material from extremely specific locations, ...